An extended Hückel study of the electronic properties of III–V compounds and their alloys

• Tight-Binding Extended Hückel Method applied to semiconductor alloys.
• The Hückel parameters were generated using simulated annealing technique.
• Calculation of the deformation potentials for five III–V compounds.
• Good agreement of the calculated alloy gap in X and Γ with experimental values.

In this work, we performed tight binding calculations of the electronic structure of III–V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT). In particular, this paper is focused on the dependency between band gap and the applied pressure and also the alloy composition.