A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer

The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrödinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values.