Effects of doping concentration on the transition energy of InGaN/GaN quantum well diodes

• We study effects of doping on the transition energy of InGaN/GaN QW diodes.
• The shift of the emission energy with the operating current is demonstrated.
• Field distributions, band profiles and overlapping integrals are illustrated.
• Simulations are based on the Schrödinger–Poisson self-consistent solutions.

The effects of the doping level and the operating current on the transition energy of InGaN/GaN QW diodes have been studied through the self-consistent solution of the Schrödinger and Poisson equations. Broad change in the transition energy is observed due to the doping variation. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is reduced significantly by increasing the doping concentration.