Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.

► Unique way of coupling of light with InAs NW is discussed.
► Scattering of light due to the enhanced internal electric field in InAs NW is demonstrated.
► Electro-optic effect in Raman scattering of NW is discussed.
► Experimental results are explained using the electronic band structure of InAs NWs.