کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1592449 1515636 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
چکیده انگلیسی

A transparent indium tin oxide (ITO)/SiOx/ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated. The average optical transmittance of the structure in the visible region was about 84%. The device demonstrated a unipolar resistive switching behavior. The X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometer results of the SiOx film indicated that many oxygen vacancies were within the SiOx film. From the switching behavior, the temperature coefficient of resistance, and the size effect of resistance, the resistive memory behavior can be explained based on conducting filaments composed of oxygen vacancies. The resistive switching behavior is then explained by the rupture and the formation of filaments near the top electrode.


► The resistive switching of a transparent SiOx-based device was investigated.
► The average optical transmittance of the SiOx-based structure was about 84%.
► A physical model was proposed to explain the unipolar switching behavior.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 159, April 2013, Pages 13–17
نویسندگان
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