کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1592488 | 1515638 | 2013 | 4 صفحه PDF | دانلود رایگان |
Ag–N dual-acceptors doped p-type ZnO films were grown on glass substrates by the sol–gel method. The influence of dual-doping on the structural, electrical, and optical properties of samples was investigated in detail. The p-type conductivity of ZnO:(Ag,N) film is long-time stable. The resistivity of dual-doped ZnO:(Ag,N) film is much lower than that of mono-doped ZnO:Ag and ZnO:N films. ZnO homostructural p–n junction was fabricated by depositing an n-type ZnO layer on a p-type ZnO:(Ag,N) layer. The current–voltage characteristics show typical rectifying behaviors. Moreover, the ZnO:(Ag,N) film exhibits a good c-axis orientation, a high transmittance in the visible region, and a strong ultraviolet emission at room temperature.
► Ag–N dual-acceptors doped p-type ZnO films were grown on glass.
► Resistivity of dual-doped film is much lower than that of mono-doped films.
► The p-type behavior of ZnO:(Ag, N) film is long-time stable.
Journal: Solid State Communications - Volume 157, March 2013, Pages 45–48