Low temperature electrical transport properties of F-doped SnO2 films

We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T−3, indicating that the electron–phonon interaction is main dephasing mechanism for electrons.

► We study the electrical transport properties of F-doped SnO2 thin films.
► The phonon-dominated scattering is the main conduction mechanism in high temperature ranges.
► In the low temperature ranges, the weak localization effect is observed, from which the inelastic scattering time is extracted.
► The electron–phonon interaction is the main dephasing mechanism for electrons.