کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1592575 1515640 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Absence of room temperature ferromagnetism in Mn-doped ZnS nanocrystalline thin film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Absence of room temperature ferromagnetism in Mn-doped ZnS nanocrystalline thin film
چکیده انگلیسی

Mn-doped ZnS nanocrystalline thin films having composition Zn1−xMnxS (x=0.02, 0.05, 0.1 and 0.15) were prepared by the electron beam evaporation technique. Their structural and magnetic properties had been investigated. X-ray diffraction results show single phase of hexagonal type structure samples without any detectable secondary phase providing the evidence that Mn2+ ions are incorporated into the ZnS lattice. Evidence of nanocrystalline nature of the films was observed from the investigation of surface morphology using atomic force microscopy. The magnetic measurements at 5 K reveal superparamagnetic behavior. The field dependent magnetization measurements confirm the absence of the room temperature ferromagnetism in the single phase electron beam evaporated Zn1−xMnxS (x=0.02, 0.05, 0.1 and 0.15) nanocrystalline films. Furthermore, the inverse susceptibility versus T confirms paramagnetic behavior for the Mn-doped films in the temperature range 100 K≤T≤300 K. The absence of significant impurities and/or defects could be attributed to explanation for the absence of free carriers and consequently the absence of room temperature ferromagnetism in all nanocrystalline Zn1−xMnxS films. The absence of room temperature ferromagnetism is evidence by marked concave nature of Arrott's plot without any spontaneous magnetization.


► The Mn-doped ZnS nanocrystalline films were synthesized.
► The crystal structure of the films has been determined.
► Surface morphology using atomic force microscopy has been investigated.
► The magnetic properties of the films were studied.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 155, February 2013, Pages 29–33
نویسندگان
, ,