Boron-doping controlled peculiar transport properties of graphene nanoribbon p–n junctions

We construct two kinds of p–n junctions based on graphene nanoribbons with different doping concentration. The left part of junction is Boron-doped at the edge of zigzag-edge graphene nanoribbon, and the right part is Boron-doped at the center. The transport properties, calculated by nonequilibrium Green's function method combined with the density functional theory under external bias, show obvious rectification effect and interesting negative differential resistance phenomenon depending on Boron-doping density and position. Considering the interaction of charge carriers with impurity and the correlation between charges at the edges and center, the excellent nanoscale electronic devices have been achieved.

► High rectification ratio p–n junctions in graphene nanoribbon are realized.
► We find negative differential resistance phenomenon and explain its mechanism.
► We control the interaction of charge carriers with impurity to achieve nano-devices.