Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Influences of the dielectric layer-induced interfacial charges on two-dimensional electron gases (2DEGs) are theoretical calculated in thin-barrier Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs). A decrease of 2DEG mobilities limited by three main scattering mechanisms, including misfit dislocation, threading dislocation and interface roughness scatterings, is observed with increasing value of the density of interfacial charges. The results in this article can be used to design structures to generate higher mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs.

► Influence of the dielectric layer-induced interfacial charges for Al2O3/AlGaN/GaN is studied.
► A decrease of 2DEG mobilities limited by three main scattering mechanisms is shown.
► Three scatterings is misfit dislocation, threading dislocation and interface roughness.
► The results can be used to design structures to generate higher mobility in HEMTs.