کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1592623 | 1515639 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bonding to antibonding transition for hole ground states in coupled InAs quantum wires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.
► Orbital characters of hole ground state in coupled quantum wires are investigated.
► Transform from a bonding to an antibonding orbital is found for hole ground state.
► Variations of g factors under magnetic fields prove antibonding hole ground states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 156, March 2013, Pages 41–44
Journal: Solid State Communications - Volume 156, March 2013, Pages 41–44
نویسندگان
Jiqing Wang, Deshuang Shang, Huibing Mao, Jianguo Yu, Qiang Zhao, Pingxiong Yang, Huaizhong Xing,