کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1592623 1515639 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bonding to antibonding transition for hole ground states in coupled InAs quantum wires
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Bonding to antibonding transition for hole ground states in coupled InAs quantum wires
چکیده انگلیسی

We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.


► Orbital characters of hole ground state in coupled quantum wires are investigated.
► Transform from a bonding to an antibonding orbital is found for hole ground state.
► Variations of g factors under magnetic fields prove antibonding hole ground states.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 156, March 2013, Pages 41–44
نویسندگان
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