کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1592630 | 1515639 | 2013 | 5 صفحه PDF | دانلود رایگان |

Using the first principles DFT calculations, we have elucidated the electronic basis of the α→ω and the ω→β transitions in group IVB elements. After considering several possible factors that could give rise to the structural stability of a particular crystal structure, the changes in the band structure energy due to Peierls–Jahn–Teller distortion and crystal-field effects on sub orbital of d bands coupled with Ewald energy differences have been identified as the causes for these transitions. The role of van Hove singularities and consequent electronic topological transitions has also been examined.
► Electronic basis of phase transitions in Group IV B elements has been given.
► This is related to pseudo-gaps in the respective density of states.
► Density functional theory is employed.
► Symmetry breaking, crystal fields and van Hove singularities are factors cosidered.
► Direct α→β phase change in the latest group IVB element Rf is rationalized.
Journal: Solid State Communications - Volume 156, March 2013, Pages 80–84