کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1592645 1002668 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of anisotropic strain on the charge dynamics of Nd0.5Sr0.5MnO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Effect of anisotropic strain on the charge dynamics of Nd0.5Sr0.5MnO3 thin films
چکیده انگلیسی

We report the transmittance (T  ) and the pump–probe transmittance change (ΔT)(ΔT) of Nd0.5Sr0.5MnO3 (NSMO) thin films grown on SrTiO3(STO)(100) and STO(110) substrates in 1.3–1.7 eV range at room temperature. The strain of NSMO was isotropic on STO(100) and anisotropic on STO(110). Both T   and ΔTΔT showed no polarization dependence in NSMO/STO(100) but the intensity of T   and ΔTΔT was anisotropic in NSMO/STO(110). Also ΔTΔT showed sharp exponential decay with increasing time delay between the pump and probe pulse. The short time decay behaviour (≲0.3ps) showed no significant polarization direction and substrate dependence, which indicates that the carrier–carrier scattering rate is not sensitive to the strain state in NSMO.


► We grow two Nd0.5Sr0.5MnO3 thin films.
► One is istoropically strained and the other one is anisotropically strained.
► We measured the transmittance and the time-dependent transmittance change.
► The isotropic strained thin film showed no polarization dependence.
► The anisotropic strained thin film showed the polarization dependence.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 152, Issue 16, August 2012, Pages 1541–1544
نویسندگان
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