Tunable defect mode in a semiconductor-dielectric photonic crystal containing extrinsic semiconductor defect

In this work, we theoretically investigate the tunable properties in the defect mode for a defective semiconductor-dielectric photonic crystal (SDPC). Here, the defect layer is an extrinsic semiconductor of n type InSb, n-InSb, which has a strong temperature- and concentration-dependent dielectric constant. With the use of n-InSb, the defect mode can be tuned as a function of temperature and concentration. The defect mode frequency is blue-shifted as the concentration or the temperature increases. In addition, this defect mode frequency shows a nearly linear dependence on the concentration but a nonlinear dependence on the temperature. Finally, by increasing the defect thickness leads to the presence of multiple defect modes which can be used to design a multichanneled filter.

► Tunable defect modes in a doped semiconductor defective PC are analyzed.
► The defect mode is blue-shifted as the doping concentration and temperature increase.
► Multiple defect modes appear at thicker defect layer, leading to a tunable multichanneled filter.