Electrical injection and detection of spin accumulation in Ge at room temperature

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into nn-type Ge(001) substrates with electron densities 2×1016

► We observe spin accumulation in Ge at room temperature.
► Different dopings are used to confirm spin accumulation in the Ge substrate.
► The three-terminal Hanle effect has been used to measure spin accumulation.
► There is a direct correlation between spin lifetime and substrate doping.
► The magnitude of the spin accumulation matches theory for low doping.