کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1592855 1002676 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogen storage of beryllium adsorbed on graphene doping with boron: First-principles calculations
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Hydrogen storage of beryllium adsorbed on graphene doping with boron: First-principles calculations
چکیده انگلیسی

Based on density-functional theory, we find that B-doped graphene significantly enhances the Be adsorption energy and prevent Be atoms from clustering. The complex of Be adsorbed on B-doped graphene can serve as a high-capacity hydrogen storage medium: the hydrogen storage capacity (HSC) can reach up to 15.1 wt% with average adsorption energy −0.298 eV/H2 for double-sided adsorption. It has exceeded the target specified by US Department of Energy with HSC of 9 wt% and a binding energy of −0.2 to −0.6 eV/H2 at near-ambient conditions. By analyzing the projected electronic density of states of the adsorbed system, we show that the high HSC is due to the change of electron distribution of H2 molecules and a graphene system decorated with B and Be atoms.


► Boron-doped graphene prevents Be atoms from clustering.
► The complex of Be adsorbed on B-doped graphene can store 15.1 wt% of H2 molecules.
► The high hydrogenous storage capacity is due to change of electron distribution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 152, Issue 5, March 2012, Pages 422–425
نویسندگان
, , , , ,