Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices

► The annealing effect on multilayer InGaAs/GaAs quantum dots (QDs) is investigated. ► The QDs are overgrown with comparatively larger monolayer coverage. ► Experimental results demonstrated stability of peak emission wavelength. ► Existence of dots with good crystalline quality is seen at higher temperatures. ► Simulation was carried out to correlate with our experimental results.