کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1592968 | 1002680 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InN doped with Zn: Bulk and surface investigation from first principles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Structures and stabilities of Zn adsorption and incorporation at InN surfaces are systematically investigated by first-principles calculations. An InN (0001)–(2×2) surface covered by 3/4 monolayer Zn adsorption atoms at the H3 sites is found to be energetically favorable. The calculated surface energies demonstrate the stability of Zn-incorporated surfaces. Substitutional defects may act as a potential source for the bulk and surface p-type behavior in Zn-doped InN.
► We investigated theoretically the stability of the Zn dopants at InN surface.
► Zn atoms prefer to adsorb at the H3 sites of InN (0001) surface.
► Zn may be a potential candidate for p-type InN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 152, Issue 13, July 2012, Pages 1168–1171
Journal: Solid State Communications - Volume 152, Issue 13, July 2012, Pages 1168–1171
نویسندگان
Jianli Wang, Gang Tang, X.S. Wu, Mingqiang Gu,