کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593043 | 1002683 | 2011 | 4 صفحه PDF | دانلود رایگان |

The effect of nitrogen doping on optical properties and electronic structures of SrZrO3 (SZO) films was investigated both experimentally and theoretically. A shift of the absorption edge to the longer wavelength, i.e., the narrowing of the band gap caused by nitrogen doping was observed. The first-principles calculations revealed that the band gap reduced in nitrogen-doped SZO because of the localized N 2p states above O 2p states and the bottom of conduction band of Zr 4d shifting to a lower energy.
Research highlights
► A shift of the absorption edge to longer wavelength in N-doped SrZrO3 film.
► The experimental results show a 0.08 eV reduction of band gap in N-doped film.
► The first-principles calculations are used to analyze the impact of N-doping.
► N 2p states localized above O 2p states and Zr 4d shifted to a lower energy.
Journal: Solid State Communications - Volume 151, Issue 4, February 2011, Pages 280–283