کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593072 | 1002684 | 2012 | 4 صفحه PDF | دانلود رایگان |

We investigate the negative thermal quenching behavior of the 3.338 eV emission in ZnO nanorods. A correlation between the 3.338 eV and the 3.368 eV (surface exciton) emissions is determined from temperature-dependent photoluminescence. The activation energies of the 3.338 eV emission, obtained using an approximated multi-level model, indicate an trap state between the two surface exciton emissions. The present study demonstrates a nondestructive and easy method to understand the surface effects on the optical properties of semiconductor nanostructures.
► Negative thermal quenching of the 3.338 eV emission in ZnO is investigated.
► The activation energies of the 3.338 eV emission are exacted by a multi-level model.
► We attribute this emission as a near-surface structural defect-bound exciton.
► Trap states may exist between different surface exciton centers.
Journal: Solid State Communications - Volume 152, Issue 18, September 2012, Pages 1757–1760