Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

► InN thin films were grown on GaN templates at different temperatures by PAMBE. ► InN films were characterized by XRD, Hall effect, absorption and Raman spectroscopy. ► The optical band gap of InN films was found to be carrier concentrations dependent. ► Carrier concentrations dependent optical band gap of InN films was described by the k.p model. ► The transport properties of InN/GaN Schottky junction were studied.