Photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires

We have investigated the effects of the nitrogen and indium concentrations on the photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy.

► We have calculated the binding energy of a donor impurity in GaInNAs/GaAs QWW.
► The change in the photoionization cross-section with N–In concentrations is studied.
► Both parameters are found to be strongly depend on the N and In concentrations.