کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593131 | 1002687 | 2012 | 4 صفحه PDF | دانلود رایگان |
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
► Growth of single layer graphene by MBE on h-BN is demonstrated.
► Growth of graphene on h-BN is a form of van der Waals epitaxy.
► Raman spectra of single layer graphene nanodomains.
► AFM images and Raman maps reveal non-uniform coverage of the grown graphene.
Journal: Solid State Communications - Volume 152, Issue 12, June 2012, Pages 975–978