Effect of inelastic electron-phonon interaction on tunneling magnetoresistance through ferromagnetic-organic molecule-ferromagnetic junction

► We use the NEGF method and the tight-binding Hamiltonian model. ► We investigate the effect of inelastic electron-phonon interactions on TMR. ► We use the wide-band approximation for FM electrodes. ► We find that the electron-phonon interaction leads to reduction of the TMR ratio.