کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593305 1002694 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Engineering and metrology of epitaxial graphene
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Engineering and metrology of epitaxial graphene
چکیده انگلیسی

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.


► Single-layer graphene grown with a fairly uniform carrier density over a large area.
► Polymer encapsulation improves graphene temporal stability and carrier mobility.
► Demonstrated non-volatile, non-invasive, and reversible photochemical gating of epitaxial graphene.
► Explored the accuracy and robustness of QHE in graphene/polymer heterostructures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 151, Issue 16, August 2011, Pages 1094–1099
نویسندگان
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