Negative differential resistance of a metal–insulator–metal device with gold nanoparticles embedded in polydimethylsiloxane

Metal–insulator–metal (MIM) devices play an important role in information storage cells. In this research, a MIM with an insulator made from polydimethylsiloxane blended with gold nanoparticles has been investigated. The current–voltage characteristic demonstrates a negative differential resistance (NDR) and memory effect. This article attempts to explain the NDR and memory effect, using the charge trapping and releasing mechanisms of the gold nanoparticles and also electron tunneling mechanisms.

► Metal–insulator–metal (MIM) structure of gold/PDMS–gold nanoparticles/gold, fabricated by spin coating.
► MIM with negative differential resistance and memory effect.
► Mechanism for the negative differential resistance and memory effect explained.