کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593365 | 1002697 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods](/preview/png/1593365.png)
چکیده انگلیسی
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
► AC conductance in 2D arrays of Ge-in-Si QDs using acoustic technique.
► Non-Ohmic behavior is due to heating of the holes by AC electric field.
► Simulations of AC conductance in a 2D lattice of localized states were performed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 152, Issue 10, May 2012, Pages 860–863
Journal: Solid State Communications - Volume 152, Issue 10, May 2012, Pages 860–863
نویسندگان
I.L. Drichko, A.M. Diakonov, V.A. Malysh, I.Yu. Smirnov, E.S. Koptev, A.I. Nikiforov, N.P. Stepina, Y.M. Galperin, J. Bergli,