کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593368 1002697 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First principles calculations on the effect of pressure on SiH4(H2)2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
First principles calculations on the effect of pressure on SiH4(H2)2
چکیده انگلیسی

The effect of pressure on the strength of H2 covalent bond in the molecular solid SiH4(H2)2 has been investigated using quantum molecular dynamics simulations and charge density analysis. Our calculations show, in agreement with the implications of the experimental results, that substantial elongation of H2 bond can be achieved at low pressures, with the onset of rapid changes close to 40 GPa. Model calculations show redistribution of charge from bonding to antibonding states to be responsible for the behavior. Our computed Raman spectra confirm the dynamic exchange of hydrogen atoms speculated to be operative in SiH4–D2 mixture by experiments. This exchange is shown to be a three step process driven by thermal fluctuations.


► High pressure behavior of SiH4(H2)2 is studied using first principles.
► Charge transfer from bonding to antibonding states leads to weakening of H2 bond.
► Simulations predict, SnH4 to be more effective in H2 bond destabilization.
► Calculated Raman and IR spectra confirm HD exchange between SiH4 and H2 molecules.
► Molecular dynamics simulations reveal the exchange process to be a three step.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 152, Issue 10, May 2012, Pages 873–877
نویسندگان
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