2D planar field emission devices based on individual ZnO nanowires

2D planar field emission devices based on individual ZnO nanowires were achieved on Si/SiO2 substrate via a standard e-beam lithography method. The anode, cathode and ZnO nanowires were on the same substrate; so the electron field emission is changed to 2D. Using e-beam lithography, the emitter (cathode) to anode distance could be precisely controlled. Real time, in situ observation of the planar field emission was realized in a scanning electron microscope. For individual ZnO nanowires, an onset voltage of 200 V was obtained at 1 nA. This innovative approach provides a viable and practical methodology to directly implement into the integrated field emission electrical devices for achieving “on-chip” fabrication.

► Novel 2D planar field emission devices based on individual ZnO nanowires were achieved.
► Field emission current of individual ZnO nanowires was in situ acquired in a scanning electron microscope chamber.
► Tip to electrode distance could be precisely controlled by the standard e-beam lithography technique.