کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593468 1515663 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ab initio studies on the electronic structure of CeIrSi3
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Ab initio studies on the electronic structure of CeIrSi3
چکیده انگلیسی
We investigated the electronic properties of CeIrSi3 using density functional theory. The electronic structure of CeIrSi3 was calculated with the spin-orbit interactions and the on-site Coulomb potential for the Ce-derived 4f orbitals. The Ce 4f bands are located near the Fermi level. The fully relativistic band structure scheme shows that the spin-orbit coupling splits the 4f states into two manifolds. It was found that the total number of DOS at the Fermi level by the fully relativistic scheme corresponds to the large electronic specific heat coefficient γb=9.88mJ/K2mol and underestimates the experiment value by a factor of 12.1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 7–8, February 2010, Pages 337-340
نویسندگان
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