کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593478 1515663 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Donor–acceptor pair recombination in non-stoichiometric ZnO thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Donor–acceptor pair recombination in non-stoichiometric ZnO thin films
چکیده انگلیسی

The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor–acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of ED=40meV and EA=320meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 7–8, February 2010, Pages 379–382
نویسندگان
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