Negative differential capacitance in n-GaN/p-Si heterojunctions

Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 ∘C. Current–Voltage (I–V)(I–V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior.

Research highlights
► Negative differential capacitance has been observed in n-GaN/p-Si heterojunctions.
► The NDC is observed at low frequencies 1 and 10 kHz.
► The NDC is also studied with temperature and found that it has disappeared above 323 ∘C.
► A simple model involving two quantum states is proposed to explain NDC behavior.