Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

► InN thin films were grown on GaN templates by PAMBE. ► The transport properties of InN/GaN Schottky junctions were studied. ► The barrier height and the ideality factor were found to be temperature dependent. ► Inhomogeneity of the barrier at the heterostructure interface is observed. ► The inhomogeneous behavior is explained with a Gaussian distribution of barrier heights.