کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593608 1002708 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural stability and electronic properties of Ni-doped armchair graphene nanoribbons
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Structural stability and electronic properties of Ni-doped armchair graphene nanoribbons
چکیده انگلیسی

The size dependent electronic properties of armchair graphene nanoribbons (AGNR) with Ni doped atoms have been investigated using spin-unrestricted density functional theory. We predict antiferromagnetic (AFM) ground states for Ni-termination and one edge Ni-doping. The computed formation energy reveals that one edge Ni-terminated AGNR are energetically more favourable as compared to pristine ribbons. One edge substitutional doping is energetically more favourable as compared to centre doping by ∼1 eV whereas both edge doping is unfavourable. The bond length of substitutional Ni atoms is shorter than that of Ni adsorption in GNR, implying a stronger binding for substitutional Ni atoms. It is evident that binding energy is also affected by the coordination number of the foreign atom. The results show that Ni-interaction perturbs the electronic structure of the ribbons significantly, causing enhanced metallicity for all configurations irrespective of doping site. The band structures reveal the separation of spin up and down electronic states indicating towards the existence of spin polarized current in Ni-terminated and one edge doped ribbons. Our calculation predicts that AGNR containing Ni impurities can play an important role for the fabrication of spin filters and spintronic devices.


► Substitutional Ni-doping causes stronger binding as compared with adsorption.
► One edge Ni-terminated ribbons are energetically more favourable than pristine ones.
► Ni-terminated and one edge Ni-doped ribbons have an antiferromagnetic ground state.
► Ni-terminated and one edge doped ribbons can sustain spin polarized current.
► Edge is the most preferred site for Ni-doping.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 151, Issue 20, October 2011, Pages 1490–1495
نویسندگان
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