The influence of spin-flip scattering on the preparation and detection of a single spin state in a quantum dot attached to a spin battery

Recently, the possibility of an all electrical scheme of preparation and readout for a single spin state in a single quantum dot attached to spin biased leads has been shown [F. Chi et al. Phys. Rev. B 81, 075310 (2010)]. However, spin scattering mechanisms have been omitted. To remedy this lack we consider the influence of the spin-flip scattering process on the proposed preparation and readout scheme.

► Spin bias enables one to prepare and read out a single spin state for real spin lifetimes.
► Large spin-flip strength leads to strong oscillations of the QD’s occupation numbers.
► Green’s functions are calculated for finite values of the spin-flip strength.