کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593652 | 1515675 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure and Fermi surfaces of the superconductive A3B compounds: AÂ = Â V, Nb; BÂ = Â Ga, Ge and Sn
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic structure and Fermi surfaces of the superconductive A3B compounds: AÂ = Â V, Nb; BÂ = Â Ga, Ge and Sn Electronic structure and Fermi surfaces of the superconductive A3B compounds: AÂ = Â V, Nb; BÂ = Â Ga, Ge and Sn](/preview/png/1593652.png)
چکیده انگلیسی
The full-potential linearized augmented-plane wave (FP-LAPW) method is employed in calculations of the band structure and Fermi surfaces of the superconductive A15 (Cr3O-type) compounds V 3B and Nb3B, B=Ga, Ge and Sn. A plot of the total density of states shows a minimum above EF in all studied compounds separating bonding bands from antibonding bands. The V compounds possess higher densities of states at EF, whereas narrower bandwidths are observed for the Nb compounds. From the results it is inferred that the higher transition temperature Tc experimentally observed for the Nb compounds arises from larger volumes of the Fermi surfaces for electron sheets besides the multi-Fermi-surface structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 31â32, August 2009, Pages 1269-1273
Journal: Solid State Communications - Volume 149, Issues 31â32, August 2009, Pages 1269-1273
نویسندگان
C. Paduani,