Nonlocal analysis to study of the impact ionization and avalanche characteristics of deep submicron Si devices

► Analytic model which includes the effects nonequilibrium transport of carriers (NETC). ► NETC significantly speeds up the avalanche process. ► NETC appreciably increases the speed of ultra-narrow high field devices (UNHFD). ► NETC overcompensate the slowing effects of carrier's dead space in the UNHFD. ► NETC offers additional speed improvements over those expected merely from scaling.