کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1593743 | 1515645 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlation between film thickness and zinc defect distribution along the growth direction in an isotopic multilayer ZnO thin film grown by pulsed laser deposition analyzed using the internal diffusion method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Zinc self-diffusion along the growth direction was analyzed for the isotopic multilayer ZnO thin film ((64ZnO/68ZnO)664ZnO) deposited by pulsed laser deposition. The isotopic distribution was measured using a secondary ion mass spectrometry. The amplitude of the 64Zn abundance in the depth profile was reduced by annealing at 993 K for several hours due to interdiffusion between the 64ZnO and 68ZnO layers. The diffusion profiles at the isotopic interfaces were analyzed using a periodic equation. The obtained zinc self-diffusion coefficients at several isotopic interfaces along the growth direction showed that the self-diffusion coefficients increased towards the film/substrate interface. A similar trend was also found in the lateral direction. The variation among the self-diffusion coefficients was related to the film thicknesses at the analysis positions. Since zinc self-diffusion is controlled by a vacancy-mediated mechanism, the variation in zinc diffusivity along the growth direction can be attributed to the effect of compressive biaxial stress. These findings are useful for producing high-quality ZnO devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 43â44, November 2010, Pages 2118-2121
Journal: Solid State Communications - Volume 150, Issues 43â44, November 2010, Pages 2118-2121
نویسندگان
Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Naoki Ohashi, Hajime Haneda, Isao Sakaguchi,