Resistance switching in transparent magnetic MgO films

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.

► We study evidences of bipolar resistive switching in magnetic MgO thin films.
► Magnetism arises from lattice defects situated at the cation sites.
► We propose defects form conduction filaments.
► Hydrogen reduction will compensate hole carriers.
► Oxidation will increase carriers, thus controlling the switching phenomena.