کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593832 1002717 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure
چکیده انگلیسی
► The tunneling effects are very important for the small ellipsoidal quantum dot sizes for the bound exciton system. ► The peak of the binding energy shifts towards a smaller ellipsoidal quantum dot size as the pressure is increased. ► The binding energy of the bound exciton decreases as the symmetry of the dot shape reduces. ► The binding energy increases monotonically as the pressure or Al concentration increases. ► The influence of pressure or Al concentration is more pronounced for the smaller quantum dot sizes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 151, Issue 24, December 2011, Pages 1907-1911
نویسندگان
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