Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting diode (LED) structures has been studied. It is shown that the e-beam exposure leads to an increase of emission intensity and to a formation of new blue-shifted emission bands. The changes observed were explained by the enhancement of In diffusion stimulated by excess carrier recombination.

Research highlights
► Low-energy e-beam irradiation increases the cathodoluminescence intensity of InGaN/GaN LED.
► New emission bands appear under e-beam irradiation.
► Enhanced In diffusion probably takes place under e-beam irradiation.