کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594003 | 1515652 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanism for the metal-conducting behavior of a CaB4 single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The temperature-dependent resistivity of a pure CaB4 single crystal has been observed to demonstrate metal-conducting behavior. The normal Hall-coefficient measurement is indicative of the electrons as the conducting carriers with a room-temperature density of 4.7×1021 cm−3. The observed metal-conducting behavior can be understood using a simple model, in which the Ca ions are treated as independent Einstein harmonic oscillators embedded in a Debye rigid boron network. The ab initio calculations of band structure and density of states corroborate the experimentally observed metal-conducting behavior of CaB4, showing that it originates mainly from the p orbital of B atom and the hybridized d orbital of Ca atom.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 29–30, August 2010, Pages 1317–1320
Journal: Solid State Communications - Volume 150, Issues 29–30, August 2010, Pages 1317–1320
نویسندگان
Xianyue Han, Zhongyuan Liu, Dongli Yu, Shengwei Xin, Julong He, Bo Xu, Yongjun Tian,