کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594044 1515679 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots
چکیده انگلیسی
Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 23–24, June 2009, Pages 937-940
نویسندگان
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