کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594103 | 1515643 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7Ã1015 to 8.5Ã1018Â cmâ3. Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7Ã1015Â cmâ3 is estimated to be as high as â1019Â cmâ3. The defect state is found to be located â450Â meV away from the band edge.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 47â48, December 2010, Pages 2370-2373
Journal: Solid State Communications - Volume 150, Issues 47â48, December 2010, Pages 2370-2373
نویسندگان
J.K. Mishra, S. Dhar, O. Brandt,