کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594130 | 1515660 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates](/preview/png/1594130.png)
چکیده انگلیسی
An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the [0001] direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1Ì100} and {1Ì102} planes. The disordered nuclei of the GaN nanorods produced a two-dimensional thin-film layer near the GaN/Si(111) interfacial region. The relation between the microstructural properties and the geometry factors of the tip region for GaN nanorods formed on Si(111) substrates is described on the basis of the XRD and TEM results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 13â14, April 2010, Pages 636-639
Journal: Solid State Communications - Volume 150, Issues 13â14, April 2010, Pages 636-639
نویسندگان
K.H. Lee, J.Y. Lee, Y.H. Kwon, S.Y. Ryu, T.W. Kang, H.Y. Jung, S.H. Park, D.U. Lee, T.W. Kim,