کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594152 1002729 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Vacancy cluster-limited electronic transport in metallic carbon nanotube
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Vacancy cluster-limited electronic transport in metallic carbon nanotube
چکیده انگلیسی

We investigate the electronic properties of metallic (7,7) carbon nanotubes (CNT) in the presence of a variety of tetra- and hexa-vacancy defects, by using the first principles density functional theory (DFT) combined with the non-equilibrium Green’s function technique. From the view point of energetic stability large vacancies tend to split into pentagon and heptagon (5–7) defects. However, this does not preclude the presence of “holes” in the carbon nanotube by the nanoelectronic lithography technique. We show that the states linked to large vacancies hybridize with the extended states of the nanotubes to modify their band structure. As a consequence, the hole-like defects in the CNT lead to more prominent electronic transport compared to the situation in the defective CNT consisting of pentagon–heptagon pair defects. Our study suggests the possibility to improve the electronic properties of a defective carbon nanotube via morphological modifications induced by irradiation techniques.

Research highlights
► Quantum transport in the presence of vacancy cluster.
► States associated with large vacancies hybridize with the extended states.
► Vacancy cluster leads to more prominent electronic transport.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 151, Issue 1, January 2011, Pages 9–12
نویسندگان
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