Defect induced ferromagnetism in carbon-doped ZnO thin films

We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation. Magnetization, Hall effect, X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO. The samples were observed to have nn-type conduction with the carrier concentration increasing with C doping. XPS does not give any evidence for C substituted at the O site, and is more consistent with the formation of C–O bonds and with the presence of C primarily in the +4 state. It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+).

Research highlights
► Defect-induced room temperature ferromagnetism in C-doped ZnO thin films, which is an nn-type.
► Defects are identified as zinc vacancies.
► Zinc vacancies are stabilized due to incorporation of C in a high valance state.