A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAs heterostructure

Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs1−xNx/Al0.38Ga0.62As samples (x=0x=0, 0.1% and 0.4%) shows that, as xx increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.