کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594188 | 1515647 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition](/preview/png/1594188.png)
چکیده انگلیسی
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 39–40, October 2010, Pages 1902–1905
Journal: Solid State Communications - Volume 150, Issues 39–40, October 2010, Pages 1902–1905
نویسندگان
Shun-Tsung Lo, Kuang Yao Chen, T.L. Lin, Li-Hung Lin, Dong-Sheng Luo, Y. Ochiai, N. Aoki, Yi-Ting Wang, Zai Fong Peng, Yiping Lin, J.C. Chen, Sheng-Di Lin, C.F. Huang, C.-T. Liang,