کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594238 | 1515692 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing temperature of Ga2O3/V films on synthesizing β - Ga2O3 nanorods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
β-Ga2O3nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of β-Ga2O3 nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the β-Ga2O3 nanorods annealed at 950 âC have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3 structures with lengths of about 5 μm and diameters of about 180 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 148, Issues 9â10, December 2008, Pages 480-483
Journal: Solid State Communications - Volume 148, Issues 9â10, December 2008, Pages 480-483
نویسندگان
Zhaozhu Yang, Chengshan Xue, Huizhao Zhuang, Gongtang Wang, Jinhua Chen, Hong Li, Lixia Qin, Dongdong Zhang, Yinglong Huang,